 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Schnelle IR-Lumineszenzdiode (950 nm) im 5 mm Radial-Gehause High-Speed Infrared Emitter (950 nm) in 5 mm Radial Package SFH 4501, SFH 4502, SFH 4503 SFH 4501 SFH 4502 SFH 4503 Wesentliche Merkmale * GaAs-LED mit sehr hohem Wirkungsgrad * Hohe Zuverlassigkeit * Gute spektrale Anpassung an Si-Fotoempfanger Anwendungen * IR-Fernsteuerung von Fernseh- und Rundfunkgeraten, Videorecordern, Lichtdimmern * Geratefernsteuerungen fur Gleich- und Wechsellichtbetrieb * Sensorik * Diskrete Lichtschranken Typ Type SFH 4501 SFH 4502 SFH 4503 Bestellnummer Gehause Ordering Code Package Q62702-P5061 Q62702-P5062 Q62702-P5305 Features * Very highly efficient GaAs-LED * High reliability * Spectral match with silicon photodetectors Applications * IR remote control of hi-fi and TV-sets, video tape recorders, dimmers * Remote control for steady and varying intensity * Sensor technology * Discrete interrupters 5-mm-LED-Gehause (T 13/4), schwarz eingefarbt, Anschlu im 2.54-mm-Raster (1/10''), Anodenkennzeichnung: kurzerer Anschlu 5 mm LED package (T 13/4), black-colored epoxy resin lens, solder tabs lead spacing 2.54 mm (1/10''), anode marking: short lead 2000-01-01 1 OPTO SEMICONDUCTORS SFH 4501, SFH 4502, SFH 4503 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, tp = 10 s, D = 0 Surge current Verlustleistung Power dissipation Warmewiderstand Sperrschicht - Umgebung, freie Beinchenlange max. 10 mm Thermal resistance junction - ambient, lead length between package bottom and PCB max. 10 mm Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 m A, tp = 20 ms Abstrahlwinkel Half angle SFH 4501 SFH 4502 SFH 4503 Aktive Chipflache Active chip area Abmessungen der aktiven Chipflache Dimension of the active chip area Symbol Symbol peak Wert Value 950 Einheit Unit nm Symbol Symbol Wert Value - 40 ... + 100 3 100 1 180 375 Einheit Unit C V mA A mW K/W Top; Tstg VR IF (DC) IFSM Ptot RthJA 40 nm 7 18 4 Grad deg. A LxB LxW 0.09 0.3 x 0.3 mm2 mm 2000-01-01 2 OPTO SEMICONDUCTORS SFH 4501, SFH 4502, SFH 4503 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value 10 Einheit Unit ns Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf auf 10%, bei IF = 100 mA, tp = 20 ms, RL = 50 Switching times, e from 10% to 90% and from 90% to 10%, IF = 100 mA, tp = 20 ms, RL = 50 Kapazitat Capacitance VR = 0 V, f = 1 MHz Durchlaspannung, Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom, Reverse current VR = 3 V Gesamtstrahlungsflu, Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e, Co 35 pF VF VF IR 1.5 ( 1.8) 3.2 ( 3.6) 0.01 ( 10) V V A e 32 mW TCI - 0.44 %/K IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA TCV TC - 1.5 + 0.2 mV/K nm/K 2000-01-01 3 OPTO SEMICONDUCTORS SFH 4501, SFH 4502, SFH 4503 Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Description Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Symbol SFH 4501 Ie min Ie typ Ie typ 63 90 550 Werte Values SFH 4502 25 50 310 SFH 4503 63 200 1200 mW/sr Einheit Unit mW/sr 2000-01-01 4 OPTO SEMICONDUCTORS SFH 4501, SFH 4502, SFH 4503 Relative Spectral Emission Irel = f () 100 OHF00777 Radiant Intensity e = f (IF) e 100 mA OHF00809 Single pulse, tp = 20 s 10 2 e Max. Permissible Forward Current IF = f (TA) 120 OHF00359 rel 80 F mA 100 e (100 mA) 80 60 10 0 R thJA = 450 K/W 60 40 10 -1 40 20 10 -2 20 0 800 850 900 950 1000 nm 1100 10 -3 10 0 10 1 10 2 10 3 mA 10 4 F 0 0 20 40 60 80 100 C 120 TA Forward Current IF = f (VF) single pulse, tp = 20 s F 10 4 mA 10 3 10 2 10 1 10 0 10 -1 10 -2 10 -3 OHF00784 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VF 2000-01-01 5 OPTO SEMICONDUCTORS SFH 4501, SFH 4502, SFH 4503 Radiation Characteristics rel = f () SFH 4501 40 30 20 10 0 1.0 OHF00859 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Radiation Characteristics rel = f () SFH 4502 40 30 20 10 0 1.0 OHF00810 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Radiation Characteristics rel = f () SFH 4503 40 30 20 10 0 1.0 OHF01142 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 2000-01-01 6 OPTO SEMICONDUCTORS SFH 4501, SFH 4502, SFH 4503 Mazeichnung Package Outlines SFH 4501 Area not flat 2.54 mm spacing 0.6 0.4 9.0 8.2 7.8 7.5 5.9 5.5 1.8 1.2 29.5 27.5 0.8 0.4 o5.1 o4.8 0.6 0.4 Anode GEX06952 SFH 4502 Mae in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified. 2000-01-01 7 OPTO SEMICONDUCTORS SFH 4501, SFH 4502, SFH 4503 SFH 4503 Area not flat 0.6 0.4 9.0 8.2 7.8 7.5 2.54 mm spacing 0.8 0.4 5.9 5.5 o5.1 o4.8 1.8 1.2 Anode 29 27 5.7 5.1 Chip position 0.6 0.4 GEX06048 Mae in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified. 2000-01-01 8 OPTO SEMICONDUCTORS SFH 4501, SFH 4502, SFH 4503 Lotbedingungen Soldering Conditions Tauch-, Schwall- und Schlepplotung Dip, Wave and Drag Soldering Lotbadtemperatur Maximal zulassige Lotzeit Max. Perm. Soldering Time 10 s Abstand Lotstelle - Gehause Distance between Solder Joint and Case 1.5 mm Kolbenlotung (mit 1,5-mm-Kolbenspitze) Iron Soldering (with 1.5-mm-bit) Temperatur des Kolbens Maximale zulassige Lotzeit Abstand Lotstelle - Gehause Distance between Solder Joint and Case 1.5 mm Temperature of the Soldering Bath 260 C Temperature Max. of the Permissible Soldering Iron Soldering Time 300 C 3s 2000-01-01 9 OPTO SEMICONDUCTORS |
Price & Availability of SFH4501
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |